2n3439 2n3440 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any erro rs or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www .semelab.co.uk document number 3066 issue: 1 7v 1a 0.5a 5w 1w ?65 to 200c 200c high voltage npn transistors features ? dual silicon planar epitaxial npn transistor high voltage applications: these devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. v cbo collector ? base voltage (i e = 0) v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i c = 0) i c collector current i b base current p tot total power dissipation at t case 25c t amb 50c t stg storage temperature t j junction temperature 450v 350v 300v 250v mechanical data dimensions in mm (inches) absolute maximum ratings (t case = 25c unless otherwise stated) 2n3439 2n3440 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) pin 1 = emitter pin 2 = base pin 3 = collector to39 package (to-205ad)
2n3439 2n3440 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any erro rs or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www .semelab.co.uk document number 3066 issue: 1 parameter test conditions min. typ. max. unit i c = 50ma 2n3439 i c = 50ma 2n3440 v ce = 300v 2n3439 v ce = 200v 2n3440 v ce = 450v 2n3439 v ce = 300v 2n3440 v cb = 350v 2n3439 v cb = 250v 2n3440 v eb = 6v i c = 50ma i b = 4ma i c = 50ma i b = 4ma i c = 20ma v ce = 10v i c = 2ma v ce = 10v v ceo(sus)* collector ? emitter sustaining voltage (i b = 0) i ceo collector cut-off current (i b = 0) i cex collector cut-off current (v be = -1.5v) i cbo collector ? base cut-off current (i e = 0) i ebo emitter cut-off current (i c = 0) v ce(sat)* collector ? emitter saturation voltage v be(sat)* base ? emitter saturation voltage h fe* dc current gain parameter test conditions min. typ. max. unit electrical characteristics (t case = 25 c unless otherwise stated) f t transition frequency c ob output capacitance h fe small signal current gain i c = 10ma v ce = 10v f = 5mhz v cb = 10v f = 1mhz i c = 5ma v ce = 10v f = 1khz 15 10 25 mhz pf ? * pulse test t p = 300 s , 2% dynamic characteristics (t case = 25 c unless otherwise stated) 350 250 20 50 500 500 20 20 20 0.5 1.3 40 160 30 v a a a a v v ? ? 2n3439 only thermal data parameter min. typ. max. unit r ja thermal resistance junction to ambient 175 c/w r jc thermal resistance junction to case 35 c/w
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